But is it Reliable?
Gallium Nitride (GaN) Reliability Explained
Thirty years of silicon power-MOSFET development taught us that one of the key variables controlling the adoption rate of a disruptive technology is whether or not the product is reliable enough to use in the application. This principle has guided the design of EPC’s enhancement mode Gallium Nitride devices. EPC has published articles describing the reliability tests performed and the results achieved for EPC’s eGaN FETs. Reliability testing has demonstrated that the technology is now ready for general commercial use.
eGaN FETs are fabricated on a silicon wafer using CMOS processing to leverage existing infrastructure for high volume, cost effective, and highly portable manufacturing. Based on long term reliability data as detailed in EPC’s reliability reports, lifetime expectancy and failure rate are extremely low under both gate bias and drain bias, high temperature testing. eGaN FETs use wafer level packaging with two layers, glass and polymide, to protect the active area from the environment.